SHALLOW IMPURITY NEUTRALIZATION IN GAP BY ATOMIC-HYDROGEN

被引:44
作者
SINGH, M [1 ]
WEBER, J [1 ]
机构
[1] UNIV BATH,SCH PHYS,BATH BA2 7AY,AVON,ENGLAND
关键词
D O I
10.1063/1.100940
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:424 / 426
页数:3
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共 22 条
[1]   DONOR-HYDROGEN COMPLEXES IN PASSIVATED SILICON [J].
BERGMAN, K ;
STAVOLA, M ;
PEARTON, SJ ;
LOPATA, J .
PHYSICAL REVIEW B, 1988, 37 (05) :2770-2773
[2]   BINDING OF ELECTRONS BY NITROGEN PAIRS IN GAP [J].
BRAND, S ;
JAROS, M .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (14) :2789-2796
[3]   DONOR NEUTRALIZATION IN GAAS(SI) BY ATOMIC-HYDROGEN [J].
CHEVALLIER, J ;
DAUTREMONTSMITH, WC ;
TU, CW ;
PEARTON, SJ .
APPLIED PHYSICS LETTERS, 1985, 47 (02) :108-110
[4]   EVIDENCE FOR COMPLEXES OF HYDROGEN WITH DEEP-LEVEL DEFECTS IN BULK III-V MATERIALS [J].
CLERJAUD, B ;
COTE, D ;
NAUD, C .
PHYSICAL REVIEW LETTERS, 1987, 58 (17) :1755-1757
[5]   OPTICAL PROPERTIES OF EXCITONS BOUND TO NEUTRAL ACCEPTORS IN GAP [J].
DEAN, PJ ;
FAULKNER, RA ;
KIMURA, S ;
ILEGEMS, M .
PHYSICAL REVIEW B, 1971, 4 (06) :1926-&
[6]  
DEAN PJ, 1976, J APPL PHYS, V38, P3551
[7]   MODEL CALCULATION OF NITROGEN PROPERTIES IN III-V-COMPOUNDS [J].
GIL, B ;
ALBERT, JP ;
CAMASSEL, J ;
MATHIEU, H ;
LAGUILLAUME, CB .
PHYSICAL REVIEW B, 1986, 33 (04) :2701-2712
[8]   ISOTOPE SHIFTS IN GROUND-STATE OF SHALLOW, HYDROGENIC CENTERS IN PURE GERMANIUM [J].
HALLER, EE .
PHYSICAL REVIEW LETTERS, 1978, 40 (09) :584-586
[9]   BULK ACCEPTOR COMPENSATION PRODUCED IN PARA-TYPE SILICON AT NEAR-AMBIENT TEMPERATURES BY A H2O PLASMA [J].
HANSEN, WL ;
PEARTON, SJ ;
HALLER, EE .
APPLIED PHYSICS LETTERS, 1984, 44 (06) :606-608
[10]   INFRARED SPECTROSCOPIC EVIDENCE OF SILICON RELATED HYDROGEN COMPLEXES IN HYDROGENATED N-TYPE GAAS DOPED WITH SILICON [J].
JALIL, A ;
CHEVALLIER, J ;
PESANT, JC ;
MOSTEFAOUI, R ;
PAJOT, B ;
MURAWALA, P ;
AZOULAY, R .
APPLIED PHYSICS LETTERS, 1987, 50 (08) :439-441