INFRARED SPECTROSCOPIC EVIDENCE OF SILICON RELATED HYDROGEN COMPLEXES IN HYDROGENATED N-TYPE GAAS DOPED WITH SILICON

被引：33

作者：

JALIL, A

CHEVALLIER, J

PESANT, JC

MOSTEFAOUI, R

PAJOT, B

MURAWALA, P

AZOULAY, R

机构：

[1] UNIV PARIS 07,ECOLE NORMALE SUPER,PHYS SOLIDES GRP,F-75251 PARIS 05,FRANCE

[2] CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 08期

关键词：

D O I：

10.1063/1.98167

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：439 / 441

页数：3

共 21 条

[1] INVESTIGATIONS OF HYDROGEN IMPLANTED GAP SINGLE-CRYSTALS BY MEANS OF PARTICLE INDUCED GAMMA-SPECTROSCOPY, INFRARED-SPECTROSCOPY, AND RUTHERFORD BACKSCATTERING CHANNELING TECHNIQUE
ASCHERON, C
BAUER, C
SOBOTTA, H
RIEDE, V
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1985, 89 (02): : 549 - 557
[2] MOCVD N-TYPE DOPING OF GAAS AND GAALAS USING SILICON AND SELENIUM AND FABRICATION OF DOUBLE HETEROSTRUCTURE BIPOLAR-TRANSISTOR
AZOULAY, R
DUGRAND, L
ANKRI, D
RAO, EVK
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 453 - 460
[3] THE ISOTOPE STUDY OF THE SI-H ABSORPTION PEAKS IN THE FZ-SI GROWN IN HYDROGEN ATMOSPHERE
BAI, GR
QI, MW
XIE, LM
SHI, TS
[J]. SOLID STATE COMMUNICATIONS, 1985, 56 (03) : 277 - 281
[4] Burstein E., 1969, TUNNELING PHENOMENA
[5] Chevallier J., 1986, Materials Science Forum, V10-12, P591, DOI 10.4028/www.scientific.net/MSF.10-12.591
[6] DONOR NEUTRALIZATION IN GAAS(SI) BY ATOMIC-HYDROGEN
CHEVALLIER, J
DAUTREMONTSMITH, WC
TU, CW
PEARTON, SJ
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 108 - 110
[7] CHEVALLIER J, 1985, 3RD P INT S DRY ETCH, P161
[8] INFRARED VIBRATIONAL-SPECTRA OF RF-SPUTTERED HYDROGENATED AMORPHOUS SILICON
FREEMAN, EC
PAUL, W
[J]. PHYSICAL REVIEW B, 1978, 18 (08): : 4288 - 4300
[9] ACCEPTOR COMPLEXES IN GERMANIUM - SYSTEMS WITH TUNNELING HYDROGEN
HALLER, EE
JOOS, B
FALICOV, LM
[J]. PHYSICAL REVIEW B, 1980, 21 (10): : 4729 - 4739
[10] Proton Dynamics in Hydrogen-Bonded Ferroelectrics
Imry, Y.
Pelah, I.
Wiener, E.
[J]. JOURNAL OF CHEMICAL PHYSICS, 1965, 43 (07) : 2332 - 2340

← 1 2 3 →