EPITAXIAL LAYERS OF CUINSE2

被引：41

作者：

SCHUMANN, B

TEMPEL, A

KUHN, G

机构：

[1] Karl-Marx-Univ, Leipzig, East Ger, Karl-Marx-Univ, Leipzig, East Ger

来源：

SOLAR CELLS | 1986年 / 16卷 / 1-4期

关键词：

COPPER COMPOUNDS;

D O I：

10.1016/0379-6787(86)90074-8

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Epitaxial layers of CuInSe//2 and related mixed crystals were grown on different substrates by liquid phase epitaxy and molecular beam epitaxy but mainly by flash evaporation. The geometrical foundations and experimental results are discussed. The type of epitaxy one-dimensional, multiple orientation or unique, the epitaxial temperature range and the epitaxial relationships are described.

引用

页码：43 / 63

页数：21

共 48 条

[21] MITARAY S, 1986, THIN SOLID FILMS, V136
[22] NELSON H, 1963, RCA REV, V24, P603
[23] NEUBERGER M, 1972, HDB ELECTRONIC MATER, V7
[24] NEUBERGER MS, 1971, HDB ELECTRONIC MATER, V5
[25] INFLUENCE OF SOURCE COMPOSITION ON THE PROPERTIES OF FLASH-EVAPORATED THIN-FILMS IN THE CU-IN-SE SYSTEM
NEUMANN, H
SCHUMANN, B
NOWAK, E
TEMPEL, A
KUHN, G
[J]. CRYSTAL RESEARCH AND TECHNOLOGY, 1983, 18 (07) : 895 - 900
[26] STRUCTURAL AND ELECTRICAL-PROPERTIES OF CUINSE2 EPITAXIAL LAYERS PREPARED BY SINGLE-SOURCE EVAPORATION
NEUMANN, H
NOWAK, E
SCHUMANN, B
KUHN, G
[J]. THIN SOLID FILMS, 1980, 74 (02) : 197 - 204
[27] NEUMANN H, 1981, PROG CRYST GROWTH CH, V3, P157
[28] PALATNIK LS, 1967, DOKL AKAD NAUK SSSR+, V174, P80
[29] CRYSTAL DATA FOR CUINSE2
PARKES, J
TOMLINSO.RD
HAMPSHIR.MJ
[J]. JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1973, 6 (OCT1) : 414 - 416
[30] PARTHE E, 1972, CRISTALLOCHIMIE STRU

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