GUIDING PRINCIPLE FOR PREPARING HIGHLY PHOTOSENSITIVE SI-BASED AMORPHOUS-ALLOYS

被引：138

作者：

MATSUDA, A

TANAKA, K

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1987年 / 97-8卷

关键词：

D O I：

10.1016/0022-3093(87)90328-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

收藏

页码：1367 / 1374

页数：8

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[1] ALJISHI S, 1986, MATER RES SOC S P, V70, P269
[2] CHOPRA KL, 1969, THIN FILM PHENOMENA, P137
[3] Knights J. C., 1979, JPN J APPL PHYS, V18, P101
[4] PREPARATION OF HIGHLY PHOTOSENSITIVE HYDROGENATED AMORPHOUS SI-C ALLOYS FROM A GLOW-DISCHARGE PLASMA
MATSUDA, A
YAMAOKA, T
WOLFF, S
KOYAMA, M
IMANISHI, Y
KATAOKA, H
MATSUURA, H
TANAKA, K
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (11) : 4025 - 4027
[5] PREPARATION OF HIGHLY PHOTOSENSITIVE HYDROGENATED AMORPHOUS SI-GE ALLOYS USING A TRIODE PLASMA REACTOR
MATSUDA, A
YAGII, K
KOYAMA, M
TOYAMA, M
IMANISHI, Y
IKUCHI, N
TANKA, K
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1061 - 1063
[6] FORMATION KINETICS AND CONTROL OF MICROCRYSTALLITE IN MU-C-SI-H FROM GLOW-DISCHARGE PLASMA
MATSUDA, A
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 767 - 774
[7] INVESTIGATION OF THE GROWTH-KINETICS OF GLOW-DISCHARGE HYDROGENATED AMORPHOUS-SILICON USING A RADICAL SEPARATION TECHNIQUE
MATSUDA, A
TANAKA, K
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) : 2351 - 2356
[8] GUIDING PRINCIPLE IN THE PREPARATION OF HIGH-PHOTOSENSITIVE HYDROGENATED AMORPHOUS SI-GE ALLOYS FROM GLOW-DISCHARGE PLASMA
MATSUDA, A
KOYAMA, M
IKUCHI, N
IMANISHI, Y
TANAKA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (01): : L54 - L56
[9] ELECTRON-SPIN-RESONANCE AND IR STUDIES ON A-SI1-XGEX-H PREPARED BY GLOW-DISCHARGE DECOMPOSITION
MORIMOTO, A
MIURA, T
KUMEDA, M
SHIMIZU, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) : L833 - L836
[10] ODA S, 1984, INT PHOTOVOLTAIC SCI, V1, P429