ANOMALOUS TRANSIENT TAIL DIFFUSION IN BORON-IMPLANTED SILICON

被引：5

作者：

ANTONCIK, E

机构：

[1] Institute of Physics, Aarhus University, DK, 8000, Aarhus C

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1991年 / 118卷 / 04期

关键词：

BORON; SILICON; DIFFUSION; IMPLANTATION; THERMAL ANNEALING;

D O I：

10.1080/10420159108220762

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

Anomalous transient tail diffusion is interpreted as being associated with the equilibration of the metastable state formed by the implantation process. During annealing, the sample approaches the thermodynamic equilibrium via quasi-chemical reactions involving radiation defects. The corresponding set of reaction-diffusion equations can be solved giving the space and time evolution of the defect profiles as well as their electrical activity. To exemplify the approach, the tail diffusion of the boron implants with peak concentrations transcending the solubility limit will be discussed in detail. Finally, a simple explanation will be given of the influence of lattice damage on boron diffusion due to pre- or post-implantation of silicon and boron atoms, respectively. Copyright © 1991, Taylor & Francis Group, LLC. All rights reserved.

引用

页码：371 / 381

页数：11

共 26 条

[1]

ADLER D, 1984, SEMICONDUCT SEMIMET, V21, P310

[2]

Antoncik E., 1986, Radiation Effects, V88, P217, DOI 10.1080/00337578608207481

[3] ON THE LATTICE LOCATION OF IMPLANTED IMPURITIES IN SILICON [J].

ANTONCIK, E .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 14 (02) :193-203

[4]

ANTONCIK E, 1990, 1989 P INT C SCI TEC, P471

[5]

ANTONCIK E, IN PRESS

[6]

ANTONCIK E, 1991, IN PRESS RAD EFFECTS

[7] CALCULATION OF SI AND AL INTERSTITIALS IN SILICON USING THE CLUSTER-EXTENDED GREENS-FUNCTION TECHNIQUE [J].

BARAFF, GA ;

SCHLUTER, M ;

ALLAN, G .

PHYSICA B & C, 1983, 116 (1-3) :76-78

[8] TRANSIENT ENHANCED DIFFUSION DURING RAPID THERMAL ANNEALING OF BORON IMPLANTED SILICON [J].

CHO, K ;

NUMAN, M ;

FINSTAD, TG ;

CHU, WK ;

LIU, J ;

WORTMAN, JJ .

APPLIED PHYSICS LETTERS, 1985, 47 (12) :1321-1323

[9]

COWERN NEB, 1990, MATER RES SOC SYMP P, V163, P605

[10]

COWERN NEB, 1991, PREPRINT

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