LOW-TEMPERATURE SELECTIVE-AREA DEPOSITION OF METALS - CHEMICAL VAPOR-DEPOSITION OF GOLD FROM ETHYL(TRIMETHYLPHOSPHINE)GOLD(I)

被引：11

作者：

HOLL, MMB ^{[1
]}

SEIDLER, PF ^{[1
]}

KOWALCZYK, SP ^{[1
]}

MCFEELY, FR ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 13期

关键词：

D O I：

10.1063/1.108663

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Chemical vapor deposition of high purity gold is demonstrated using ethyl(trimethylphosphine)gold(I) at temperatures as low as room temperature. Total selectivity for growth on atomically clean metallic surfaces in the presence of insulating surfaces is found over a approximately 200-degrees-C temperature range and confirmed with scanning electron microscopy and x-ray photoelectron spectroscopy. A key processing parameter is shown to be ultrahigh vacuum, particularly for growth on reactive metals such as chromium. These results suggest low-temperature selectivity can be extended to other known precursors.

引用

页码：1475 / 1477

页数：3

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