FOCUSED ION-BEAM INDUCED DEPOSITION OF PLATINUM FOR REPAIR PROCESSES

Focused ion beam induced deposition of platinum from a gas of (methylcyclopentadientyl) trimethyl platinum has been demonstrated and used for integrated circuit repair. Ga+ ions in the range of 30-40 keV have been used and line widths down to 0.3-mu-m with resistivities as low as 70 mu-OMEGA cm have been observed. The deposition yield as a function of angle of incidence has been measured by scanning the ion beam across a 2.6-mu-m diameter pyrex rod. The conductors on an actual integrated circuit have been modified by milling and filling a via to connect two Al lines in a sandwiched configuration as well as by milling two vias through passivation and connecting two adjacent Al lines.