INFLUENCE OF RESIDUAL FACET REFLECTIVITY ON NONLINEARITIES IN SEMICONDUCTOR OPTICAL AMPLIFIERS

被引：2

作者：

DURHUUS, T

MIKKELSEN, B

STUBKJAER, KE

机构：

[1] Centre for Broadband Telecommunications, Electromagnetics Institute, Technical University of Denmark

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 04期

关键词：

AMPLIFIERS; OPTICAL COMMUNICATION; OPTICAL AMPLIFIERS;

D O I：

10.1049/el:19910196

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A dynamic model for multichannel amplification by semiconductor optical amplifiers is used to predict the influence of the residual facet reflectivities on intermodulation distortion. For 25 dB of singlepass gain a reflectivity of 5 x 10(-4) will result in 3 dB excess distortion.

引用

页码：310 / 312

页数：3

共 8 条

[1]

Adams M. J., 1985, IEE Proceedings J (Optoelectronics), V132, P58, DOI 10.1049/ip-j.1985.0012

[2]

AGRAWAL GP, 1990, IEEE J QE, V26

[3]

CHA I, 1989, JUL IOOC 89 KOB, V3, P150

[4] LOW RESIDUAL REFLECTIVITY OF ANGLED-FACET SEMICONDUCTOR-LASER AMPLIFIERS [J].