CALCULATIONS OF INTRINSIC THRESHOLD FOR TE AND TM MODE IN GAAS LASER DIODES

被引：11

作者：

HATZ, J

MOHN, E

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1967年 / QE 3卷 / 12期

关键词：

D O I：

10.1109/JQE.1967.1074436

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：656 / +

页数：1

共 14 条

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