ELECTRONIC-STRUCTURE OF SNS2, SNSE2, CDI2 AND PBI2

被引:130
作者
ROBERTSON, J
机构
[1] Central Electricity Research Laboratories, Leatherhead, Surrey KT22 7SE, Kelvin Avenue
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1979年 / 12卷 / 22期
关键词
D O I
10.1088/0022-3719/12/22/017
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The band structures of the layer compounds SnS2, SnSe 2, CdI2 and PbI2 are calculated by the tight-binding method. They are in closer agreement with experimental results and previous pseudopotential calculations than previous tight-binding results have been. A universal band structure for the family is found by use of approximate algebraic band energies. For the 16-electron crystals a Gamma 2 - to L1+ indirect gap and a main optical transition due to anion p-cation p orbitals is found, whilst for PbI2 the gap is direct at A.
引用
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页码:4753 / 4766
页数:14
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