BATCH FABRICATION AND STRUCTURE OF INTEGRATED GAAS-ALXGA1-XAS FIELD-EFFECT TRANSISTOR SELF-ELECTRO-OPTIC EFFECT DEVICES (FET SEEDS)

We have demonstrated a smart pixel prototype field-effect transistor-self-electro-optic effect device (FET-SEED) integrated optoelectronic amplifier utilizing process technology suitable for flexible design and fabrication of high-yield optoelectronic circuits. A single MBE growth sequence provides for quantum-well modulators, photodiodes, doped channel MIS-like field-effect transistors (DMT's), and resistors. The device dimensions are controlled in a planar technology using ion implantation and selective plasma etching for isolation and contacting. Results demonstrate optical signal amplification in a fully integrated circuit. This technology will enable increased functionality by providing digital electronic processing between optical input and output.