AN INVESTIGATION OF I-ALGAAS/N-GAAS DOPED-CHANNEL MIS-LIKE FETS (DMTS) - PROPERTIES AND PERFORMANCE POTENTIALITIES

被引：45

作者：

HIDA, H

OKAMOTO, A

TOYOSHIMA, H

OHATA, K

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 07期

关键词：

D O I：

10.1109/T-ED.1987.23105

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1448 / 1455

页数：8

共 18 条

[1]

Dambkes H., 1983, International Electron Devices Meeting 1983. Technical Digest, P621

[2]

FURUTSUKA T, 1986, 14TH P INT C SOL STA, P335

[3] AN ACCURATE DC MODEL OF 2-DEG FET FOR IMPLEMENTATION ON A CIRCUIT SIMULATOR [J].

HIDA, H ;

ITOH, T ;

OHATA, K .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (06) :393-395

[4] A HIGH-CURRENT DRIVABILITY I-ALGAAS/N-GAAS DOPED-CHANNEL MIS-LIKE FET (DMT) [J].

HIDA, H ;

OKAMOTO, A ;

TOYOSHIMA, H ;

OHATA, K .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (11) :625-626

[5] A NOVEL 2DEGFET MODEL BASED ON THE PARABOLIC VELOCITY-FIELD CURVE APPROXIMATION [J].

HIDA, H ;

ITOH, T ;

OHATA, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (10) :1580-1586

[6] A NEW LOW-NOISE ALGAAS/GAAS 2DEG FET WITH A SURFACE UNDOPED LAYER [J].

HIDA, H ;

OHATA, K ;

SUZUKI, Y ;

TOYOSHIMA, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) :601-607

[7] HIGH-EFFICIENCY POWER 2DEGFETS BASED ON A SURFACE UNDOPED LAYER N-ALGAAS/GAAS SELECTIVELY DOPED STRUCTURE FOR KA-BAND [J].

HIDA, H ;

AKIBA, Y ;

SUZUKI, Y ;

TOYOSHIMA, H ;

OHATA, K .

ELECTRONICS LETTERS, 1986, 22 (16) :862-864

[8]

HIDA H, 1986, 44TH DRC

[9]

HIDA H, 1986, IEDM

[10]

HIDA H, 1984, 11TH P INT S GAAS RE, P551

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