AN ACCURATE DC MODEL OF 2-DEG FET FOR IMPLEMENTATION ON A CIRCUIT SIMULATOR

被引：13

作者：

HIDA, H

ITOH, T

OHATA, K

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 06期

关键词：

D O I：

10.1109/EDL.1986.26411

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：393 / 395

页数：3

共 13 条

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[2] METAL-(N) ALGAAS-GAAS TWO-DIMENSIONAL ELECTRON-GAS FET [J].

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LINH, NT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) :955-960

[3] ENHANCEMENT-MODE METAL/(AL, GA)AS/GAAS BURIED-INTERFACE FIELD-EFFECT TRANSISTOR (BIFET) [J].

DRUMMOND, TJ ;

KOPP, W ;

ARNOLD, D ;

FISCHER, R ;

MORKOC, H ;

ERICKSON, LP ;

PALMBERG, PW .

ELECTRONICS LETTERS, 1983, 19 (23) :986-987

[4] MODEL FOR MODULATION DOPED FIELD-EFFECT TRANSISTOR [J].

DRUMMOND, TJ ;

MORKOC, H ;

LEE, K ;

SHUR, M .

ELECTRON DEVICE LETTERS, 1982, 3 (11) :338-341

[5]

HENDEL RH, 1984, DEC IEDM, P857

[6]

HIDA H, UNPUB

[7]

KURODA S, 1983, OCT IEEE GAAS IC S, P162

[8]

LEE K, 1983, IEEE T ELECTRON DEV, V30, P207

[9]

LEE K, 1984, IEEE T ELECTRON DEV, V31, P29

[10] ELECTRON-DENSITY OF THE TWO-DIMENSIONAL ELECTRON-GAS IN MODULATION DOPED LAYERS [J].

LEE, K ;

SHUR, M ;

DRUMMOND, TJ ;

MORKOC, H .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) :2093-2096

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