OPTIMIZATION OF NONPLANAR POWER MOS-TRANSISTORS

被引：18

作者：

LISIAK, KP

BERGER, J

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 10期

关键词：

D O I：

10.1109/T-ED.1978.19257

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1229 / 1234

页数：6

共 13 条

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[8] POWER SILICON MICROWAVE MOS-TRANSISTOR [J].

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IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) :305-311

[9] AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED P-N JUNCTIONS IN GE SI GAAS AND GAP - (DOPANT EFFECTS IMPURITY EFFECTS T) [J].

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