CHARACTERISTICS OF P-N-JUNCTIONS FABRICATED ON HG1-XCDXTE EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：10

作者：

FAURIE, JP ^{[1
]}

SIVANANTHAN, S ^{[1
]}

LANGE, M ^{[1
]}

DEWAMES, RE ^{[1
]}

VANDEWYCK, AMB ^{[1
]}

WILLIAMS, GM ^{[1
]}

YAMINI, D ^{[1
]}

YAO, E ^{[1
]}

机构：

[1] ROCKWELL INT CORP,CTR SCI,THOUSAND OAKS,CA 91360

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 25期

关键词：

D O I：

10.1063/1.99561

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2151 / 2153

页数：3

相关论文

共 14 条

[1] INFRARED PHOTODIODES FABRICATED WITH HG1-CHI-CD-CHI-TE GROWN BY MOLECULAR-BEAM EPITAXY
ARIAS, JM
SHIN, SH
PASKO, JG
GERTNER, ER
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (01) : 39 - 41
[2] (100) VERSUS (111)B CRYSTALLOGRAPHIC ORIENTATION OF HG1-XCDXTE GROWN BY MOLECULAR-BEAM EPITAXY
ARIAS, JM
SHIN, SH
CHEUNG, JT
CHEN, JS
SIVANANTHAN, S
RENO, J
FAURIE, JP
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (05): : 3133 - 3138
[3] CARRIER GENERATION-RECOMBINATION IN SPACE-CHARGE REGION OF AN ASYMMETRICAL P-N JUNCTION
CHOO, SC
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (11) : 1069 - +
[4] CROSS AJ, 1975, SURVIVAL DISTRIBUTIO
[5] CURRENT GENERATION MECHANISMS IN SMALL BAND-GAP HGCDTE P-N-JUNCTIONS FABRICATED BY ION-IMPLANTATION
DEWAMES, RE
WILLIAMS, GM
PASKO, JG
VANDERWYCK, AHB
[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) : 849 - 858
[6] DEWAMES RE, IN PRESS J VAC SCI T
[7] GROWTH AND PROPERTIES OF HGTE-CDTE AND OTHER HG-BASED SUPERLATTICES
FAURIE, JP
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) : 1656 - 1665
[8] LATEST DEVELOPMENTS IN THE GROWTH OF CDXHG1-XTE AND CDTE-HGTE SUPER-LATTICES BY MOLECULAR-BEAM EPITAXY
FAURIE, JP
MILLION, A
BOCH, R
TISSOT, JL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03): : 1593 - 1597
[9] MOLECULAR-BEAM EPITAXY OF II-VI COMPOUNDS - CDXHG1-XTE
FAURIE, JP
MILLION, A
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 54 (03) : 582 - 585
[10] FAURIE JP, 1986, J VAC SCI TECHNOL B, V4, P586