DENSITY OF STATES IN SHORT-PERIOD SI/GE SUPERLATTICES

被引：7

作者：

GELL, MA ^{[1
]}

CHURCHILL, AC ^{[1
]}

机构：

[1] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,BLACKETT LAB,LONDON SW7 2BZ,ENGLAND

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.39.10449

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：10449 / 10451

页数：3

共 8 条

[1] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW B, 1976, 14 (02) :556-582

[2] STRUCTURAL, COMPOSITIONAL, AND OPTICAL-PROPERTIES OF ULTRATHIN SI/GE SUPERLATTICES [J].

EBERL, K ;

KROTZ, G ;

ZACHAI, R ;

ABSTREITER, G .

JOURNAL DE PHYSIQUE, 1987, 48 (C-5) :329-332

[3] EFFECT OF BUFFER-LAYER COMPOSITION ON NEW OPTICAL-TRANSITIONS IN SI/GE SHORT-PERIOD SUPERLATTICES [J].

GELL, MA .

PHYSICAL REVIEW B, 1988, 38 (11) :7535-7553

[4]

GELL MA, IN PRESS PHYS REV B

[5]

HOLLINGER G, 1987, PHOTOELECTRON SPECTR, P210

[6] STRUCTURALLY INDUCED OPTICAL-TRANSITIONS IN GE-SI SUPERLATTICES [J].

PEARSALL, TP ;

BEVK, J ;

FELDMAN, LC ;

BONAR, JM ;

MANNAERTS, JP ;

OURMAZD, A .

PHYSICAL REVIEW LETTERS, 1987, 58 (07) :729-732

[7] ELECTRONIC-STRUCTURE OF STRAINED LAYER SI/GEXSI1-X SUPERLATTICES FROM TIGHT-BINDING THEORY [J].

RUCKER, H ;

BECHSTEDT, F ;

ENDERLEIN, R ;

HENNIG, D ;

WILKE, S .

SUPERLATTICES AND MICROSTRUCTURES, 1988, 4 (4-5) :511-513

[8] ELECTRONIC DENSITY OF STATES OF AMORPHOUS SI AND GE [J].

THORPE, MF ;

WEAIRE, D .

PHYSICAL REVIEW LETTERS, 1971, 27 (23) :1581-&

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