FREQUENCY MULTIPLICATION USING RESONANT TUNNELING DIODE WITH OUTPUT AT SUBMILLIMETER WAVELENGTHS

被引：19

作者：

BOUREGBA, R

LIPPENS, D

PALMATEER, L

BOCKENHOFF, E

BOGEY, M

DESTOMBES, JL

LECLUSE, A

机构：

[1] THOMSON CSF,CENT RES LAB,F-91401 ORSAY,FRANCE

[2] UNIV SCI & TECH LILLE FLANDRES ARTOIS,SPECT HERTZIENNE LAB,F-59655 VILLENEUVE DASCQ,FRANCE

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 21期

关键词：

components; Harmonic generation; Harmonic multiplication; Microwave devices; Tunnel diodes;

D O I：

10.1049/el:19901155

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Harmonic multiplication to a frequency of 320 GHz in resonant tunnelling diodes with 1-7nm thick AlAs barriers is reported. These results are attributed to an unusually high current density of 2-8 x 15A/cm2. The fifth harmonic output power using resonant tunnelling diodes becomes comparable with that of Schottky barrier diodes. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：1804 / 1806

页数：3

共 9 条

[1]

BATELAAN PD, 1988, 4TH P C INFR PHYS ZU, P527

[2] MILLIMETRE-WAVE AND SUBMILLIMETRE-WAVE SPECTROSCOPY OF MOLECULAR-IONS [J].