FATAL ELECTROMIGRATION VOIDS IN NARROW ALUMINUM-COPPER INTERCONNECT

被引：64

作者：

ROSE, JH

机构：

[1] Digital Equipment Corporation, Northboro, MA 01532

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 18期

关键词：

D O I：

10.1063/1.108284

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The shape and crystallography of fatal electromigration voids in near-bamboo Al-2 wt % Cu thin-film conductors were studied with transmission electron microscopy. Fatal voids were typically slit shaped and intragranular. Voids formed with {111} faces and with the slit length parallel to a [022] direction. The void faces were inclined and resided in grains of varying surface crystallographic orientation. Void morphology was independent of initial precipitate condition.

引用

页码：2170 / 2172

页数：3

共 12 条

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