EXCITON DYNAMICS IN A GAAS QUANTUM-WELL

被引：54

作者：

ECCLESTON, R

STROBEL, R

RUHLE, WW

KUHL, J

FEUERBACHER, BF

PLOOG, K

机构：

[1] Max-Planck-Institut für Festkörperforschung, 7000 Stuttgart 80

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.44.1395

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Time-resolved luminescence measurements in a 27-nm GaAs quantum well show that the initial temperature of the photocreated exciton distribution is determined by the excess energy of the excitation photon. Light-hole excitons lying in the band gap transfer to heavy-hole exciton states by density-dependent exciton-exciton scattering. For excitation close to the band edge, excitons cool only via LA-phonon emission. The time-resolved luminescence profile is modeled by evaluating the LA-phonon energy-loss rate.

引用

页码：1395 / 1398

页数：4

共 13 条

[1] EXCITON DYNAMICS IN GAAS QUANTUM-WELLS
DAMEN, TC
SHAH, J
OBERLI, DY
CHEMLA, DS
CUNNINGHAM, JE
KUO, JM
[J]. JOURNAL OF LUMINESCENCE, 1990, 45 (1-6) : 181 - 185
[2] LINEWIDTH DEPENDENCE OF RADIATIVE EXCITON LIFETIMES IN QUANTUM-WELLS
FELDMANN, J
PETER, G
GOBEL, EO
DAWSON, P
MOORE, K
FOXON, C
ELLIOTT, RJ
[J]. PHYSICAL REVIEW LETTERS, 1987, 59 (20) : 2337 - 2340
[3] QUANTUM BEATS BETWEEN THE LIGHT AND HEAVY HOLE EXCITONS IN A QUANTUM-WELL
FEUERBACHER, BF
KUHL, J
ECCLESTON, R
PLOOG, K
[J]. SOLID STATE COMMUNICATIONS, 1990, 74 (12) : 1279 - 1283
[4] GOBEL EO, 1978, PHYS STATUS SOLIDI, V88, P645
[5] HOT CARRIERS IN SILICON SURFACE INVERSION LAYERS
HESS, K
SAH, CT
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) : 1254 - 1257
[6] KUHL J, 1989, FESTKOR A S, V29, P157
[7] HOT-CARRIER ENERGY-LOSS RATES IN GAAS/ALXGA1-XAS QUANTUM WELLS
LEO, K
RUHLE, WW
PLOOG, K
[J]. PHYSICAL REVIEW B, 1988, 38 (03): : 1947 - 1957
[8] PARKMAN N, 1990, EMIS DATA REV SERIES, V2
[9] EXTREMELY NARROW LUMINESCENCE LINEWIDTH IN GAAS SINGLE QUANTUM-WELLS BY INSERTION OF THIN ALAS SMOOTHING LAYERS
PLOOG, K
FISCHER, A
TAPFER, L
FEUERBACHER, BF
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1991, 52 (02): : 135 - 137
[10] HOT CARRIERS IN QUASI-2-D POLAR SEMICONDUCTORS
SHAH, J
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) : 1728 - 1743

← 1 2 →