INSITU OBSERVATION OF PARTIAL DISLOCATION-MOTION DURING GAMMA-S.RA-EPSILON TRANSFORMATION IN A FE-MN-SI SHAPE MEMORY ALLOY

被引:54
作者
HOSHINO, Y
NAKAMURA, S
ISHIKAWA, N
YAMAJI, Y
MATSUMOTO, S
TANAKA, Y
SATO, A
机构
[1] NIPPONDENSO CO LTD,NISHIO PLANT,NISHIO,AICHI 445,JAPAN
[2] NATL RES INST MET,TSUKUBA,IBARAKI 305,JAPAN
[3] TOSHIBA CO LTD,SEMICOND DEVICE ENGN LAB,SAIWAI KU,KAWASAKI 210,JAPAN
[4] TOKYO INST TECHNOL,GRAD SCH NAGATSUTA,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN
来源
MATERIALS TRANSACTIONS JIM | 1992年 / 33卷 / 03期
关键词
SHAPE MEMORY EFFECT; POLE MECHANISM; INSITU DEFORMATION; FERROMANGANESE-SILICON; GAMMA-S.RA-EPSILON TRANSFORMATION;
D O I
10.2320/matertrans1989.33.253
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Tensile deformation and heating experiments have been made in a high voltage electron microscope in order to clarify the mechanism controlling partial dislocation motion in a Fe-Mn-Si shape memory alloy. It is found that a small angle boundary composed of three types of perfect dislocations acts as a dislocation source by a pole mechanism. A dislocation reaction generating a pole dislocation is found to be (a/2)[110BAR] + (a/2)[011] + (a/2)[011BAR] --> (2a/3)[111BAR] + (a/6)[112BAR] where the first term in the right hand side is the pole dislocation proposed by Seeger. Another aspect of the present study concerns the epsilon --> gamma reverse transformation governed by partial dislocation motion upon heating. It is shown that the reverse transformation temperature depends strongly on the structure of epsilon --> martensites interacting with other epsilon-martensites. The simpler martensites reverse transform at a lower temperature. It is also demonstrated that small alpha-martensites are formed at intersection of two epsilon-martensites under certain experimental conditions and that they reverse transform at 773 K.
引用
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页码:253 / 262
页数:10
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