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PHOTOLUMINESCENCE STUDIES OF SINGLE SUBMONOLAYER INAS STRUCTURES GROWN ON GAAS (001) MATRIX

被引：11
作者：
LI, W
WANG, ZG
LIANG, JB
XU, B
ZHU, ZP
YUAN, ZL
LI, JA
机构：
[1] CHINESE ACAD SCI,INST SEMICOND,NATL SEMICOND SUPERLATTICE LAB,BEIJING 100083,PEOPLES R CHINA
[2] CHINESE ACAD SCI,INST SEMICOND,NATL INTEGRATED OPTOELECTR LAB,BEIJING 100083,PEOPLES R CHINA
来源：
APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 13期
关键词：
D O I：
10.1063/1.114361
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Optical properties of single submonolayer InAs structures grown on GaAs (001) matrix are systematically investigated by means of photoluminescence acid time-resolved photoluminescence, It is shown that the formation of InAs dots with 1 ML height leads to localization of excitons under certain submonolayer InAs coverages, which play a key role in the highly improved luminescence efficiency of the submonolayer InAs/GaAs structures. (C) 1995 American Institute of Physics.
引用
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页码：1874 / 1876
页数：3
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