FORMATION OF INAS MICROSTRUCTURES ON VARIOUSLY ORIENTED GAAS SUBSTRATES

被引：11

作者：

LEE, J ^{[1
]}

KUDO, K ^{[1
]}

KUNIYOSHI, S ^{[1
]}

TANAKA, K ^{[1
]}

MAKITA, Y ^{[1
]}

YAMADA, A ^{[1
]}

机构：

[1] ELECTROTECH LAB,SAKURA,IBARAKI 305,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 115卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90732-K

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Microstructures formed in InAs/GaAs multiple quantum well structures grown on variously oriented GaAs substrates have been investigated. Details of structure and the optical properties of the microstructures are evaluated by X-ray diffraction and low temperature photoluminescence measurements. Results show the formation of the microstructure depending on the substrate orientation and growth conditions.

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页码：164 / 168

页数：5

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