OBSERVATION OF INTERFACE DEFECTS IN STRAINED INGAAS-GAAS BY PHOTOLUMINESCENCE SPECTROSCOPY

被引：28

作者：

JOYCE, MJ ^{[1
]}

GAL, M ^{[1
]}

TANN, J ^{[1
]}

机构：

[1] UNIV NEW S WALES,SCH PHYS,KENSINGTON,NSW 2033,AUSTRALIA

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 03期

关键词：

D O I：

10.1063/1.342985

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1377 / 1379

页数：3

共 13 条

[1] OPTICAL CHARACTERIZATION OF PSEUDOMORPHIC INXGA1-XAS-GAAS SINGLE-QUANTUM-WELL HETEROSTRUCTURES [J].

ANDERSON, NG ;

LAIDIG, WD ;

KOLBAS, RM ;

LO, YC .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) :2361-2367

[2] LOCALIZATION INDUCED ELECTRON-HOLE TRANSITION RATE ENHANCEMENT IN GAAS QUANTUM WELLS [J].

CHRISTEN, J ;

BIMBERG, D ;

STECKENBORN, A ;

WEIMANN, G .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :84-86

[3]

COCKAYNE DJH, UNPUB

[4] DOPING AND TRANSPORT STUDIES IN INXGA1-XAS/GAAS STRAINED-LAYER SUPER-LATTICES [J].

FRITZ, IJ ;

DAWSON, LR ;

ZIPPERIAN, TE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :387-390

[5] OBSERVATION OF COMPRESSIVE AND TENSILE STRAINS IN INGAAS GAAS BY PHOTOLUMINESCENCE SPECTROSCOPY [J].

GAL, M ;

ORDERS, PJ ;

USHER, BF ;

JOYCE, MJ ;

TANN, J .

APPLIED PHYSICS LETTERS, 1988, 53 (02) :113-115

[6] PHOTOLUMINESCENCE IN STRAINED INGAAS-GAAS HETEROSTRUCTURES [J].

GAL, M ;

TAYLOR, PC ;

USHER, BF ;

ORDERS, PJ .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (09) :3898-3901

[7] CONTROVERSY OF CRITICAL LAYER THICKNESS FOR INGAAS/GAAS STRAINED-LAYER EPITAXY [J].

GOURLEY, PL ;

FRITZ, IJ ;

DAWSON, LR .

APPLIED PHYSICS LETTERS, 1988, 52 (05) :377-379

[8] ELIMINATION OF DARK LINE DEFECTS IN LATTICE-MISMATCHED EPILAYERS THROUGH USE OF STRAINED-LAYER SUPERLATTICES [J].

GOURLEY, PL ;

BIEFELD, RM ;

DAWSON, LR .

APPLIED PHYSICS LETTERS, 1985, 47 (05) :482-484

[9] CHARACTERIZATION OF INTERFACE DEFECTS IN GAAS-GAALAS SUPERLATTICES [J].

MAUGER, A ;

FENG, SL ;

BOURGOIN, JC .

APPLIED PHYSICS LETTERS, 1987, 51 (01) :27-29

[10]

ORDERS PJ, 1987, APPL PHYS LETT, V50, P1604

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