PHOTOLUMINESCENCE IN STRAINED INGAAS-GAAS HETEROSTRUCTURES

被引：29

作者：

GAL, M

TAYLOR, PC

USHER, BF

ORDERS, PJ

机构：

[1] UNIV UTAH,DEPT PHYS,SALT LAKE CITY,UT 84112

[2] TELECOM AUSTRALIA,RES LABS,CLAYTON,VIC 3168,AUSTRALIA

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 09期

关键词：

D O I：

10.1063/1.339236

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3898 / 3901

页数：4

共 10 条

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GAL, M ;

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[7] DETERMINATION OF CRITICAL LAYER THICKNESS IN INXGA1-XAS GAAS HETEROSTRUCTURES BY X-RAY-DIFFRACTION [J].

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[8] SPATIAL VARIATION OF BANDGAP ENERGY IN IN0.53GA0.47AS [J].

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COX, HM .

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[9] AN IN0.15GA0.85 AS/GAAS PSEUDOMORPHIC SINGLE QUANTUM WELL HEMT [J].

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IEEE ELECTRON DEVICE LETTERS, 1985, 6 (10) :491-493

[10]

YUAN YR, 1984, APPL PHYS LETT, V54, P739

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