DISTRIBUTIONS OF BORON AND PHOSPHORUS IMPLANTED IN SILICON IN THE ENERGY-RANGE 0.1-1.5 MEV

被引：29

作者：

OOSTERHOFF, S ^{[1
]}

机构：

[1] TWENTE UNIV TECHNOL,DEPT ELECT ENGN,7500 AE ENSCHEDE,NETHERLANDS

来源：

关键词：

D O I：

10.1016/0168-583X(88)90070-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：1 / 12

页数：12

共 22 条

[1]

ANTONIADES DA, 1978, SEL78020 STANF EL LA

[2]

BIERSACK JP, 1982, SPRINGER SERIES ELEC, V10, P157

[3]

Current M. I., 1985, Semiconductor International, V8, P106

[4]

FLETCHER R, 1971, AERA R6799 HARW REP

[5]

GIBBONS JF, 1975, PROJECTED RANGE STAT

[6]

HOFKER WA, 1975, PHILIPS RES REP S, V8

[7] RANGE DISTRIBUTIONS OF MEV IMPLANTS IN SILICON [J].

INGRAM, DC ;

BAKER, JA ;

WALSH, DA .

[8]

LINDHARD J, 1963, K DAN VIDENSK SELSK, V33

[9] THE ANNEALING OF 1-MEV IMPLANTATIONS OF BORON IN SILICON [J].

OOSTERHOFF, S ;

MIDDELHOEK, J .

[10]

OOSTERHOFF S, 1986, THESIS TWENTE U TECH