CHEMICAL VAPOR DEPOSITION OF SILICATE GLASSES FOR USE WITH SILICON DEVICES .2. FILM PROPERTIES

被引：74

作者：

KERN, W

HEIM, RC

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1970年 / 117卷 / 04期

关键词：

D O I：

10.1149/1.2407573

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：568 / &

相关论文

共 20 条

[1] AMICK JA, 1969, OCT EL SOC M DETR
[2] MEASUREMENT OF THICKNESS AND REFRACTIVE INDEX OF OXIDE FILMS ON SILICON
BOOKER, GR
BENJAMIN, CE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (12) : 1206 - 1212
[3] THICKNESS MEASUREMENT OF SILICON DIOXIDE LAYERS BY ULTRAVIOLET-VISIBLE INTERFERENCE METHOD
CORL, EA
WIMPFHEIMER, H
[J]. SOLID-STATE ELECTRONICS, 1964, 7 (10) : 755 - &
[4] GOLDSMITH N, 1967, RCA REV, V28, P153
[5] KERN W, 1968, RCA REV, V29, P557
[6] CHEMICAL VAPOR DEPOSITION OF SILICATE GLASSES FOR USE WITH SILICON DEVICES .1. DEPOSITION TECHNIQUES
KERN, W
HEIM, R
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (04) : 562 - &
[7] KERN W, 1969, J ELECTROCHEM SOC, V116, pC251
[8] The infra-red reflection spectrum of silicates. II
Matossi, Frank
Krueger, Hans
[J]. ZEITSCHRIFT FUR PHYSIK, 1936, 99 (1-2): : 1 - 23
[9] NONDESTRUCTIVE DETERMINATION OF THICKNESS + REFRACTIVE INDEX OF TRANSPARENT FILMS
PLISKIN, WA
CONRAD, EE
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (01) : 43 - &
[10] STABILITY OF GLAZED SILICON SURFACES TO WATER ATTACK
PLISKIN, WA
[J]. PROCEEDINGS OF THE IEEE, 1964, 52 (12) : 1468 - &