SELECTIVE EPITAXIAL-GROWTH OF YBACUO THIN-FILMS AND ITS APPLICATION TO MOS-FET FABRICATION

被引：2

作者：

HASHIGUCHI, S ^{[1
]}

MIN, E ^{[1
]}

AWAJI, T ^{[1
]}

ASANO, K ^{[1
]}

KABASAWA, U ^{[1
]}

SAKUTA, K ^{[1
]}

KOBAYASHI, T ^{[1
]}

机构：

[1] OSAKA UNIV,FAC ENGN SCI,OSAKA,JAPAN

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1991年 / 27卷 / 02期

关键词：

D O I：

10.1109/20.133456

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The feasibility of the selective (001)-Y 1Ba(z)Cu3O(y) epitaxy have been closely examined. We have obtained the selective growth of epitaxial Y1Ba(z)Cu3O(y) and heteroepitaxial (100)-Mg0/(001)-Y1Ba(z)Cu3O(y) layers through the Si0 window. The MOS-capacitors and MOS-PETs were fabricated in the same way.

引用

页码：1441 / 1444

页数：4

共 15 条

[1]

GUPITA A, 1988, APPL PHYS LETT, V52, P665

[2] PREPARATION AND SUBSTRATE REACTIONS OF SUPERCONDUCTING Y-BA-CU-O FILMS [J].