ON THE ELECTRONIC G-FACTOR IN N-TYPE SILICON INVERSION-LAYERS

[1] THEORY OF OSCILLATORY G-FACTOR IN AN MOS INVERSION LAYER UNDER STRONG MAGNETIC-FIELDS [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1974, 37 (04) : 1044 - 1052

[2] EFFECTS OF A TILTED MAGNETIC FIELD ON A 2-DIMENSIONAL ELECTRON GAS [J]. PHYSICAL REVIEW, 1968, 174 (03): : 823 - &

[3] MAGNETO-OSCILLATORY CONDUCTANCE IN SILICON SURFACES [J]. PHYSICAL REVIEW LETTERS, 1966, 16 (20) : 901 - &

[4] G FACTOR OF 2-DIMENSIONAL INTERACTING ELECTRON GAS [J]. PHYSICAL REVIEW, 1969, 178 (03): : 1416 - &

[5] KOBAYASHI M, 1974, JAPAN APPL PHYS 2 S, V2, P343

[6] EVIDENCE FOR A LANDE-FACTOR G=2 IN N-TYPE INVERTED SILICON MOSFET SURFACES [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 95 (01): : 107 - 115

[7] LANDWEHR G, 1974, PHYSIQUE CHAMPS MAGN

[8] LANDWEHR G, 1975, CNRS242 C INT, P177

[9] NEUGEBAUER T, 1975, SOLID STATE COMMUN, V17, P295, DOI 10.1016/0038-1098(75)90297-5

[10] NICHOLAS RJ, UNPUBLISHED

[1] THEORY OF OSCILLATORY G-FACTOR IN AN MOS INVERSION LAYER UNDER STRONG MAGNETIC-FIELDS [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1974, 37 (04) : 1044 - 1052

[2] EFFECTS OF A TILTED MAGNETIC FIELD ON A 2-DIMENSIONAL ELECTRON GAS [J]. PHYSICAL REVIEW, 1968, 174 (03): : 823 - &

[3] MAGNETO-OSCILLATORY CONDUCTANCE IN SILICON SURFACES [J]. PHYSICAL REVIEW LETTERS, 1966, 16 (20) : 901 - &

[4] G FACTOR OF 2-DIMENSIONAL INTERACTING ELECTRON GAS [J]. PHYSICAL REVIEW, 1969, 178 (03): : 1416 - &

[5] KOBAYASHI M, 1974, JAPAN APPL PHYS 2 S, V2, P343

[6] EVIDENCE FOR A LANDE-FACTOR G=2 IN N-TYPE INVERTED SILICON MOSFET SURFACES [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 95 (01): : 107 - 115

[7] LANDWEHR G, 1974, PHYSIQUE CHAMPS MAGN

[8] LANDWEHR G, 1975, CNRS242 C INT, P177

[9] NEUGEBAUER T, 1975, SOLID STATE COMMUN, V17, P295, DOI 10.1016/0038-1098(75)90297-5

[10] NICHOLAS RJ, UNPUBLISHED