EFFECTIVE MASSES FOR NONPARABOLIC BANDS IN P-TYPE SILICON

[1] EFFECTIVE MASS AND INTRINSIC CONCENTRATION IN SILICON [J]. SOLID-STATE ELECTRONICS, 1967, 10 (11) : 1039 - &

[2] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

[3] OHMIC HOLE MOBILITY IN CUBIC SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1974, 35 (12) : 1605 - 1614

[4] DAVIS PJ, 1972, HDB MATH FUNCTIONS F, P888

[5] CYCLOTRON RESONANCE OF ELECTRONS AND HOLES IN SILICON AND GERMANIUM CRYSTALS [J]. PHYSICAL REVIEW, 1955, 98 (02): : 368 - 384

[6] Fishman H., 1957, MATH TABLES AIDS COM, V11, P1

[7] HENSEL JC, COMMUNICATION

[8] ENERGY BAND STRUCTURE IN P-TYPE GERMANIUM AND SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (1-2) : 82 - 99

[9] KRYLOV VI, 1962, APPROXIMATE CALCULAT, P34

[10] STATISTICS AND GALVANOMAGNETIC EFFECTS IN GERMANIUM AND SILICON WITH WARPED ENERGY SURFACES [J]. PHYSICAL REVIEW, 1955, 100 (06): : 1650 - 1657

[1] EFFECTIVE MASS AND INTRINSIC CONCENTRATION IN SILICON [J]. SOLID-STATE ELECTRONICS, 1967, 10 (11) : 1039 - &

[2] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

[3] OHMIC HOLE MOBILITY IN CUBIC SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1974, 35 (12) : 1605 - 1614

[4] DAVIS PJ, 1972, HDB MATH FUNCTIONS F, P888

[5] CYCLOTRON RESONANCE OF ELECTRONS AND HOLES IN SILICON AND GERMANIUM CRYSTALS [J]. PHYSICAL REVIEW, 1955, 98 (02): : 368 - 384

[6] Fishman H., 1957, MATH TABLES AIDS COM, V11, P1

[7] HENSEL JC, COMMUNICATION

[8] ENERGY BAND STRUCTURE IN P-TYPE GERMANIUM AND SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (1-2) : 82 - 99

[9] KRYLOV VI, 1962, APPROXIMATE CALCULAT, P34

[10] STATISTICS AND GALVANOMAGNETIC EFFECTS IN GERMANIUM AND SILICON WITH WARPED ENERGY SURFACES [J]. PHYSICAL REVIEW, 1955, 100 (06): : 1650 - 1657