EFFECTS OF DANGLING BOND CHARGE ON AMBIPOLAR TRANSPORT MEASUREMENTS IN A-SI-H

被引：7

作者：

SAUVAIN, E

SHAH, A

HUBIN, J

PIPOZ, P

机构：

[1] Université de Neuchâtel, Institut de Microtechnique, 2000 Neuchâtel

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80158-9

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The dependence of the ambipolar diffusion length (L(amb)) and of the photoconductivity (sigma-ph) on the dangling bond density have been investigated by observing the increase of the dangling bond density during light soaking (Steabler Wronski effect). Two regimes are observed: in the first one, L(amb) is independent of the dangling bond density, whereas sigma-ph decreases. In the second regime, L(amb)2 decreases in the same way as sigma-ph. The effect of dangling bond charge on ambipolar transport can explain these two behaviors.

引用

页码：475 / 478

页数：4

共 13 条

[1]

BAUER GH, 1988, MATER RES SOC S P, V118, P679

[2]

HUBIN J, IN PRESS

[3] DYNAMICS OF STAEBLER-WRONSKI EFFECT IN HYDROGENATED AMORPHOUS-SILICON [J].