2-DIMENSIONAL POSITION-SENSITIVE SI(LI) DETECTOR

被引：7

作者：

WALTON, JT

HUBBARD, GS

HALLER, EE

SOMMER, HA

机构：

[1] Lawrence Berkeley Laboratory, University of California, Department of Instrument Techniques, Berkeley

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1979年 / 26卷 / 01期

关键词：

D O I：

10.1109/TNS.1979.4329654

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Circular, large-area two-dimensional Si(Li) position sensitive detectors have been fabricated. The detectors employ a thin lithium-diffused n+ resistive layer for one contact and a boron-implanted p+ resistive layer for the second contact. A position resolution of the order of 100 μm is indicated. Copyright © 1978 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：334 / 337

页数：4

共 14 条

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