FERMI LEVEL AND SURFACE-BARRIER OF GAXIN1-XAS ALLOYS

[1] Coderre W. M., 1970, Canadian Journal of Physics, V48, P463, DOI 10.1139/p70-061

[2] VACANCIES NEAR SEMICONDUCTOR SURFACES [J]. PHYSICAL REVIEW B, 1979, 20 (12): : 5150 - 5156

[3] SURFACE VACANCIES IN INP AND GAAIAS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (08) : 690 - 692

[4] DAW MS, UNPUBLISHED

[5] SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES [J]. APPLIED PHYSICS LETTERS, 1973, 23 (08) : 458 - 459

[6] KAWAJI S, 1966, J PHYS SOC JPN, VS 21, P336

[7] METAL-SEMICONDUCTOR SURFACE BARRIERS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (11-1) : 1023 - &

[8] MEAD CA, 1964, PHYS REV A, V134, P713

[9] MEINERS LG, 1980, 1980 SEM MAT P NOTT, P198

[10] MEINERS LG, UNPUBLISHED

[1] Coderre W. M., 1970, Canadian Journal of Physics, V48, P463, DOI 10.1139/p70-061

[2] VACANCIES NEAR SEMICONDUCTOR SURFACES [J]. PHYSICAL REVIEW B, 1979, 20 (12): : 5150 - 5156

[3] SURFACE VACANCIES IN INP AND GAAIAS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (08) : 690 - 692

[4] DAW MS, UNPUBLISHED

[5] SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES [J]. APPLIED PHYSICS LETTERS, 1973, 23 (08) : 458 - 459

[6] KAWAJI S, 1966, J PHYS SOC JPN, VS 21, P336

[7] METAL-SEMICONDUCTOR SURFACE BARRIERS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (11-1) : 1023 - &

[8] MEAD CA, 1964, PHYS REV A, V134, P713

[9] MEINERS LG, 1980, 1980 SEM MAT P NOTT, P198

[10] MEINERS LG, UNPUBLISHED