XPS STUDIES OF A-SI1-XCX-H PREPARED FROM C2H4/SIH4 GAS-MIXTURES

被引：6

作者：

SUZUKI, Y

MEIKLE, S

FUKUDA, Y

HATANAKA, Y

机构：

[1] Research Institute of Electronics, Graduate School of Electronic Science and Technology, Shizuoka University, Hamamatsu

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1990年 / 29卷 / 04期

关键词：

Ethylene; Hydrogen dilution; Hydrogenated amorphous silicon carbon films; Surface reactions; X-ray photoelectron spectroscopy;

D O I：

10.1143/JJAP.29.L663

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hydrogenated amorphous silicon carbon alloy films (a-Si1-xCx:H) with optical band gap 2.4 eV and x=0.5, deposited in a radio frequency (13.56 MHz) plasma of H2/C2H4/SiH4gases have been examined using X-ray photoelectron spectroscopy (XPS). From the Cls and Si2p core level spectra it was found that films grown using a smaller SiH4/C2H4ratio had a larger concentration of Si-C bonds. Further, spectrum shifts caused by slight Ar sputtering of as-deposited films suggested that the formation of Si-C bond occurs at the surfaces. Finally, valence band spectra showed that films with high Si-C bond density had a steep valence band edge typical of high quality films. © 1990 IOP Publishing Ltd.

引用

页码：L663 / L665

页数：3

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