0.2-MU-M ALSB/INAS HEMTS WITH 5V GATE BREAKDOWN VOLTAGE

被引：7

作者：

BOOS, JB ^{[1
]}

KRUPPA, W ^{[1
]}

PARK, D ^{[1
]}

SHANABROOK, BV ^{[1
]}

BENNETT, BR ^{[1
]}

机构：

[1] SFA INC,LANDOVER,MD 20785

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 23期

关键词：

HIGH ELECTRON MOBILITY TRANSISTORS; INDIUM COMPOUNDS; ALUMINUM COMPOUNDS; IMPACT IONIZATION;

D O I：

10.1049/el:19941316

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

DC and microwave measurements on AlSb/InAs HEMTs with a gate length of 0.2 mum are reported. The reverse gate characteristics exhibit relatively low gate leakage current and gate-drain breakdown voltages as high as 5V. Equivalent circuit modelling yields an f(T) of 110GHz after removal of the gate bonding pad capacitance. The bias dependence of f(max) is examined indicating a significant reduction in the unilateral gain due to impact ionisation.

引用

页码：1983 / 1984

页数：2

共 4 条

[1] IMPROVED CHARGE CONTROL AND FREQUENCY PERFORMANCE IN INAS/ALSB-BASED HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS [J].