SELECTED ASPECTS OF VERY THIN OXIDE-GROWTH PROCESSES

[1] KERN W, 1970, RCA REV, V31, P187

[2] Kern W., 1984, Semiconductor International, V7, P94

[3] EFFECTS OF PREOXIDATION AMBIENT IN VERY THIN THERMAL OXIDE ON SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : 1677 - 1682

[4] SCHWETTMANN FN, 1978, ELECTROCHEMICAL SOC, V781, P688

[1] KERN W, 1970, RCA REV, V31, P187

[2] Kern W., 1984, Semiconductor International, V7, P94

[3] EFFECTS OF PREOXIDATION AMBIENT IN VERY THIN THERMAL OXIDE ON SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : 1677 - 1682

[4] SCHWETTMANN FN, 1978, ELECTROCHEMICAL SOC, V781, P688