EFFECTS OF PREOXIDATION AMBIENT IN VERY THIN THERMAL OXIDE ON SILICON

被引：8

作者：

RUZYLLO, J ^{[1
]}

机构：

[1] PENN STATE UNIV,DEPT ELECT ENGN,UNIVERSITY PK,PA 16802

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 08期

关键词：

D O I：

10.1149/1.2108992

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1677 / 1682

页数：6

共 19 条

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