ELECTRICAL AND STRUCTURAL CHARACTERISTICS OF NITROGEN REACTION AT SIO2-SI INTERFACES

被引：10

作者：

HOWARD, JK

FLITSCH, R

RAIDER, SI

机构：

[1] IBM CORP, DIV SYST PROD, E FISHKILL, NY 12533 USA

[2] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1977年 / 14卷 / 01期

关键词：

D O I：

10.1116/1.569175

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：69 / 69

页数：1

共 10 条

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SAH, CT .

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[5] HIGH-TEMPERATURE ANNEALING OF OXIDIZED SILICON SURFACES [J].

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[6] COMBINED ESCA AND AUGER SPECTROMETER [J].

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01) :379-384

[7] USE OF AUGER-ELECTRON SPECTROSCOPY AND INERT-GAS SPUTTERING FOR OBTAINING CHEMICAL PROFILES [J].

PALMBERG, PW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1972, 9 (01) :160-&

[8] NITROGEN REACTION AT A SILICON-SILICON DIOXIDE INTERFACE [J].

RAIDER, SI ;

GDULA, RA ;

PETRAK, JR .

APPLIED PHYSICS LETTERS, 1975, 27 (03) :150-152

[9]

RAIDER SI, UNPUBLISHED

[10]

REVITZ M, UNPUBLISHED

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