THERMAL-OXIDATION OF SILICON IN VARIOUS OXYGEN PARTIAL PRESSURES DILUTED BY NITROGEN

被引：104

作者：

KAMIGAKI, Y ^{[1
]}

ITOH, Y ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 07期

关键词：

D O I：

10.1063/1.324099

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：2891 / 2896

页数：6

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