RESIDUAL-STRESS, CHEMICAL ETCH RATE, REFRACTIVE-INDEX, AND DENSITY-MEASUREMENTS ON SIO2-FILMS PREPARED USING HIGH-PRESSURE OXYGEN

被引：65

作者：

IRENE, EA ^{[1
]}

DONG, DW ^{[1
]}

ZETO, RJ ^{[1
]}

机构：

[1] USA,ELECTR TECHNOL & DEVICES LAB,FT MONMOUTH,NJ 07703

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 02期

关键词：

D O I：

10.1149/1.2129677

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：396 / 399

页数：4

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