EFFECTS OF PLASMA CLEANING ON THE DIELECTRIC-BREAKDOWN IN SIO2 FILM ON SI

被引：11

作者：

IWAMATSU, S

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 01期

关键词：

D O I：

10.1149/1.2123762

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：224 / 225

页数：2

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共 13 条

[1] EFFECTS OF MATERIAL AND PROCESSING PARAMETERS ON DIELECTRIC STRENGTH OF THERMALLY GROWN SIO2 FILMS
CHOU, NJ
ELDRIDGE, JM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (10) : 1287 - +
[2] BREAKDOWN CHARACTERISTICS IN THIN SIO2 FILM
HAMANO, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (07) : 1085 - 1092
[3] TIME-DEPENDENT MOS BREAKDOWN
LI, SP
BATES, ET
MASERJIAN, J
[J]. SOLID-STATE ELECTRONICS, 1976, 19 (03) : 235 - 239
[4] MCGAUGHAN DV, 1973, J ELECTRON, V34, P737
[5] SILICON SURFACE CONTAMINATION - POLISHING AND CLEANING
MEEK, RL
BUCK, TM
GIBBON, CF
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (09) : 1241 - 1246
[6] ACCELERATED DIELECTRIC BREAKDOWN OF SILICON DIOXIDE FILMS
OSBURN, CM
CHOU, NJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (10) : 1377 - 1384
[7] EFFECT OF MOBILE SODIUM IONS ON FIELD ENHANCEMENT DIELECTRIC BREAKDOWN IN SIO2 FILMS ON SILICON
OSBURN, CM
RAIDER, SI
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (10) : 1369 - 1376
[8] DIELECTRIC BREAKDOWN IN SILICON DIOXIDE FILMS ON SILICON .1. MEASUREMENT AND INTERPRETATION
OSBURN, CM
ORMOND, DW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (05) : 591 - +
[9] DIELECTRIC-BREAKDOWN PROPERTIES OF SIO2-FILMS GROWN IN HALOGEN AND HYDROGEN-CONTAINING ENVIRONMENTS
OSBURN, CM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (06) : 809 - 815
[10] ELECTRICAL-CONDUCTION AND DIELECTRIC BREAKDOWN IN SILICON DIOXIDE FILMS ON SILICON
OSBURN, CM
WEITZMAN, EJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (05) : 603 - +