IONIZATION MECHANISM OF H+ SPUTTERED FROM HYDROGENATED SILICON

被引：27

作者：

WITTMAACK, K ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW LETTERS | 1979年 / 43卷 / 12期

关键词：

D O I：

10.1103/PhysRevLett.43.872

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The emission of H+ sputtered from hydrogenated amorphous silicon has been studied for 3- to 30-keV noble-gas-ion bombardment. The results suggest that excited silicon atoms can be emitted as (Si2pH)+ molecules. Auger deexcitation in vacuum results in (SiH)2+ which disintegrates into Si+ and H+ with a corresponding gain in kinetic energy due to Coulomb explosion. Direct emission of H+ is important only at H+ energies > 30 eV or at bombardment energies <3 keV. © 1979 The American Physical Society.

引用

页码：872 / 875

页数：4

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