MONTE-CARLO ANALYSIS OF HOT-ELECTRON TRANSPORT AND IMPACT IONIZATION IN SILICON

A novel impact ionization model which is consistent with a realistic band structure of Si has been developed. The present model contains only one parameter directly corresponding to the average matrix element for the ionization transition. The ionization probability is calculated at every k-point in the first Brillouin zone and the intrinsic anisotropy of the ionization probability is explicitly taken into account. Employing the Monte Carlo procedure including the present ionization model, the ionization coefficients are calculated and a best-fitting to the experimental ionization coefficients is obtained when the value of the parameter in the ionization model is equal to that extracted from the first-principles calculations.