DIFFERENTIAL ANALYSIS OF TSC SPECTRA IN GAAS SEMI-INSULATING MATERIAL

[1] PHOTOCONDUCTIVITY IN N-TYPE GAAS-O ASSOCIATED WITH THE DEEP LEVEL AT 0.4 EV [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (04): : 635 - 650

[2] BEHAVIOR OF LATTICE DEFECTS IN GAAS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (02) : 225 - &

[3] BONNAFE J, 1980, ELECT LETT, V16

[4] Braunlich P., 1979, THERMALLY STIMULATED, V37

[5] PHOTOELECTRONIC ANALYSIS OF HIGH RESISTIVITY CRYSTALS - (A) GAAS, (B) SB2S3 [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) : 315 - 322

[6] CASTAGNE M, J APPL PHYS

[7] CHEN R, 1976, J PHYS CHEM SOLIDS, P15

[8] FILLARD JP, 1970, CR ACAD SCI B PHYS, V271, P382

[9] NEW APPROACH TO THERMALLY STIMULATED TRANSIENTS - EXPERIMENTAL-EVIDENCE FOR ZNSE - AL CRYSTALS [J]. PHYSICAL REVIEW B, 1978, 18 (08): : 4497 - 4508

[10] FILLARD JP, 1977, THERMALLY STIMULATED

[1] PHOTOCONDUCTIVITY IN N-TYPE GAAS-O ASSOCIATED WITH THE DEEP LEVEL AT 0.4 EV [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (04): : 635 - 650

[2] BEHAVIOR OF LATTICE DEFECTS IN GAAS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (02) : 225 - &

[3] BONNAFE J, 1980, ELECT LETT, V16

[4] Braunlich P., 1979, THERMALLY STIMULATED, V37

[5] PHOTOELECTRONIC ANALYSIS OF HIGH RESISTIVITY CRYSTALS - (A) GAAS, (B) SB2S3 [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) : 315 - 322

[6] CASTAGNE M, J APPL PHYS

[7] CHEN R, 1976, J PHYS CHEM SOLIDS, P15

[8] FILLARD JP, 1970, CR ACAD SCI B PHYS, V271, P382

[9] NEW APPROACH TO THERMALLY STIMULATED TRANSIENTS - EXPERIMENTAL-EVIDENCE FOR ZNSE - AL CRYSTALS [J]. PHYSICAL REVIEW B, 1978, 18 (08): : 4497 - 4508

[10] FILLARD JP, 1977, THERMALLY STIMULATED