PHOTOCONDUCTIVITY IN N-TYPE GAAS-O ASSOCIATED WITH THE DEEP LEVEL AT 0.4 EV

被引：17

作者：

ARIKAN, MC

HATCH, CB

RIDLEY, BK

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1980年 / 13卷 / 04期

关键词：

D O I：

10.1088/0022-3719/13/4/020

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：635 / 650

页数：16

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