TRIBOLOGY OF ION-BOMBARDED SILICON FOR MICROMECHANICAL APPLICATIONS

被引:22
作者
GUPTA, BK [1 ]
CHEVALLIER, J [1 ]
BHUSHAN, B [1 ]
机构
[1] AARHUS UNIV,INST PHYS & ASTRON,DK-8000 AARHUS,DENMARK
来源
JOURNAL OF TRIBOLOGY-TRANSACTIONS OF THE ASME | 1993年 / 115卷 / 03期
关键词
D O I
10.1115/1.2921649
中图分类号
TH [机械、仪表工业];
学科分类号
0802 ;
摘要
Silicon is used in the fabrication of microelectromechanical systems (MEMS). The friction and wear characteristics are of major design concern for any mechanical device requiring relative motion. In the present investigations we have studied the influence of ion bombardment on the microstructure, crystallinity, composition, microhardness, friction, and wear behavior. The ion bombardment modifies the elastic/plastic deformation characteristics and crack nucleation that occurs during the indentation. C+ bombarded monocrystalline and polycrystalline Si exhibit very low coefficient of friction (0.025-0.05) and wear factors (10(-7) mm3/N m) while slid against 52100 steel and alumina in dry and moist air and dry nitrogen atmospheres. Ion bombardment resulted in the formation of an amorphized layer that consists of SiC, C, and Si. We have shown that the improvements in friction and wear are because of the formation of SiC and not because of amorphization alone.
引用
收藏
页码:392 / 399
页数:8
相关论文
共 18 条
  • [1] INFLUENCE OF OXYGEN ON THE WEAR OF SILICON
    BAYER, RG
    [J]. WEAR, 1981, 69 (02) : 235 - 239
  • [2] Bhushan B, 1990, TRIBOLOGY MECH MAGNE, P231, DOI DOI 10.1007/978-1-4684-0335-0
  • [3] BHUSHAN B, 1991, HDB TRIBOLOGY MAT CO, pCH4
  • [4] FORMATION AND CHARACTERIZATION OF CARBON LAYERS DEPOSITED DURING ION-BOMBARDMENT OF SILICON
    BRAUN, M
    KHOSROUPOUR, H
    JOHANSSON, E
    HOGMARK, S
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 37-8 : 434 - 437
  • [5] THE ELASTIC PROPERTIES OF ION-IMPLANTED SILICON
    BURNETT, PJ
    BRIGGS, GAD
    [J]. JOURNAL OF MATERIALS SCIENCE, 1986, 21 (05) : 1828 - 1836
  • [6] SURFACE SOFTENING IN SILICON BY ION-IMPLANTATION
    BURNETT, PJ
    PAGE, TF
    [J]. JOURNAL OF MATERIALS SCIENCE, 1984, 19 (03) : 845 - 860
  • [7] ELECTROMECHANICAL DEVICES UTILIZING THIN SI DIAPHRAGMS
    GUCKEL, H
    LARSEN, S
    LAGALLY, MG
    MOORE, G
    MILLER, JB
    WILEY, JD
    [J]. APPLIED PHYSICS LETTERS, 1977, 31 (09) : 618 - 619
  • [8] Howe R. T., 1984, P INT EL DEV M SAN F, P213
  • [9] DIRECT ION-BEAM DEPOSITION OF CARBON-FILMS ON SILICON IN THE ION ENERGY-RANGE OF 15-500 EV
    LAU, WM
    BELLO, I
    FENG, X
    HUANG, LJ
    QIN, FG
    YAO, ZY
    REN, ZZ
    LEE, ST
    [J]. JOURNAL OF APPLIED PHYSICS, 1991, 70 (10) : 5623 - 5627
  • [10] Mehregany M., 1991, Journal of Micromechanics and Microengineering, V1, P73, DOI 10.1088/0960-1317/1/2/001