NEW ION-IMPLANTATION SYSTEM WITH ADVANCED PROCESS CAPABILITIES

被引:5
作者
WAUK, MT
机构
关键词
D O I
10.1016/0168-583X(87)90842-1
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:280 / 284
页数:5
相关论文
共 1 条
[1]   PLANAR CHANNELING EFFECTS IN SI(100) [J].
CURRENT, MI ;
TURNER, NL ;
SMITH, TC ;
CRANE, D .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 6 (1-2) :336-348