NONCONTACT DEEP LEVEL TRANSIENT SPECTROSCOPY (DLTS) BASED ON SURFACE PHOTOVOLTAGE

被引：18

作者：

LAGOWSKI, J ^{[1
]}

EDELMAN, P ^{[1
]}

MORAWSKI, A ^{[1
]}

机构：

[1] SEMICOND DIAGNOST INC,TAMPA,FL

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 1A期

关键词：

D O I：

10.1088/0268-1242/7/1A/041

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present results of non-contact, wafer-scale measurement of the deep level thermal emission realised in GaAs on a native surface barrier using surface photovoltage (SPV) transients. The principle of corresponding optical deep level transient spectroscopy (DLTS) is discussed and the approach is applied to non-contact wafer mapping.

引用

页码：A211 / A214

页数：4

共 7 条

[1] DEEP-LEVEL OPTICAL SPECTROSCOPY IN GAAS [J].