NONCONTACT MAPPING OF HEAVY-METAL CONTAMINATION FOR SILICON IC FABRICATION

被引：116

作者：

LAGOWSKI, J ^{[1
]}

EDELMAN, P ^{[1
]}

DEXTER, M ^{[1
]}

HENLEY, W ^{[1
]}

机构：

[1] SEMICOND DIAGNOST INC,TAMPA,FL

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 1A期

关键词：

D O I：

10.1088/0268-1242/7/1A/036

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the principles and application examples of a recently refined, computerised, surface photovoltage (SPV) method. This new method is capable of wafer-scale, non-contact mapping of metal contaminants in the bulk and on the surface with sensitivities as high at 10(10) atoms cm-3. We demonstrate the unique ability of SPV to measure product wafers with finished integrated circuits.

引用

页码：A185 / A192

页数：8

共 11 条

[1] METHOD FOR MEASUREMENT OF SHORT MINORITY CARRIER DIFFUSION LENGTHS IN SEMICONDUCTORS [J].