ROLE OF HYDROGEN RADICAL TREATMENT IN NUCLEATION OF NANOCRYSTALLINE SILICON

被引：12

作者：

OTOBE, M

ODA, S

机构：

[1] Department of Physical Electronics, Tokyo Institute of Technology, Meguro-ku, Tokyo, O-okayama

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 10A期

关键词：

MICROCRYSTALLINE SILICON; HYDROGEN RADICAL; MICROCRYSTALLIZATION; NUCLEATION; PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION; GROWTH MECHANISM;

D O I：

10.1143/JJAP.31.L1443

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the nucleation process and crystallization process in the fabrication of nanocrystalline silicon (nc-Si). The nanocrystallization process consists of deposition of hydrogenated amorphous Si (a-Si:H) and treatment of hydrogen radicals. Nuclei of nanocrystallization are formed on the a-Si:H surface only if the atmosphere is hydrogen rich. Nuclei are not formed under the normal growth conditions of a-Si:H, not to be found either on the surface or inside as-grown a-Si:H. Growth of nc-Si is caused by hydrogen radicals diffusing through the a-Si:H layer to the nuclei.

引用

收藏

页码：L1443 / L1445

页数：3

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