SPIN DEPENDENT RECOMBINATION IN PT-DOPED SILICON P-N-JUNCTIONS

被引：18

作者：

CHRISTMANN, P

WETZEL, C

MEYER, BK

ASENOV, A

ENDROS, A

机构：

[1] UNIV GLASGOW,DEPT ELECT & ELECTR ENGN,GLASGOW G12 8QQ,SCOTLAND

[2] SIEMENS AG,ZFE ME FKE ABT 42,W-8000 MUNICH,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 15期

关键词：

D O I：

10.1063/1.107160

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electrically detected magnetic resonance experiments showing spin dependent recombination in commercial p-n diodes are presented. The observed anisotropy in the g values along with the marked shift from the free electron g-value point to a metal-vacancy complex. Deep level transient spectroscopy reveals the presence of the Pt acceptor level (0/-) at E(c) - 0.23 eV and the donor level (+/0) at E(v) + 0.32 eV in the same device. Calculations of the recombination rates support that spin dependent recombination occurs at the Pt (+/0) donor level.

引用

页码：1857 / 1859

页数：3